Tantalum compound, process of producing the same, and material for forming tantalum oxide films

Abstract

A novel tantalum compound represented by the formula (1): Ta(CH.sub.3).sub.3 (OR).sub.2, wherein R is an alkyl group having from 2 to 7 carbon atoms. The novel tantalum compound is produced by reacting a haloalkoxytantalum compound represented by the formula (2): TaX.sub.n (OR).sub.5-n, wherein X is halogen, R is an alkyl group having from 2 to 7 carbon atoms, and n is an integer of from 0 to 4, with a methylmetal compound; and recovering the tantalum compound represented by the above formula (1) by reduced pressure distillation. The tantalum compound has a high vapor pressure and permits effective formation of a uniform film of tantalum oxide with good properties by a CVD method. Therefore, the tantalum compound is very useful for manufacturing semiconductor devices.

Dependencies are inferred from the claim text.