Process for the preparation of a target component for cathode sputtering

A process for the preparation of a target component for cathode sputtering comprising an inorganic ceramic material which has a melting point higher than 300.degree. C., consisting essentially of:

• a) providing a precursor system of the inorganic ceramic material which is capable of generating said inorganic ceramic material at temperatures .theta. of between 300.degree. C. and 1600.degree. C. and lower than the melting point of said inorganic ceramic material, said precursor system containing at least 20 mol % of an inorganic adjuvant consisting of at least an inorganic compound which has a melting point lower than or equal to the temperature .theta. chosen for the production of the inorganic ceramic material and which is selected from the group consisting of alkali metal halides and alkali metal carbonates;
• b) forming a layer of said precursor system on a support which is substantially inert towards the precursor system and the inorganic ceramic material to be produced and which is thermally and mechanically stable up to temperatures higher than .theta., with the proviso that said support is not made of a metal foam or metal felt;
• c) heating the combination of support and precursor system to the temperature .theta. chosen for producing the inorganic ceramic material, said heating being performed at a rate of temperature rise between 0.05.degree. C. and 20.degree. C. per minute such as to avoid the formation of dendrites;
• d) maintaining the heated combination of support and precursor system at said temperature .theta. until the precursor system is converted into the inorganic ceramic material;
• and
• e) cooling the combination of support and inorganic ceramic material to return both the support and inorganic ceramic material to ambient temperature, this cooling being carried out at a cooling rate ranging from 0.05.degree. C. to 20.degree. C. per minute so as to avoid any quenching phenomenon.