Film forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily
AssigneesTokyo Electron Limited, Tokyo Electron Tohoku Kabushiki Kaisha
InventorsMasayuki Imai, Toshiharu Nishimura
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Abstract
A film is formed on a substrate by supplying a plurality of processing gases into a processing container and forming the film on the substrate from the processing gases while exhausting a portion of the gases out of the processing container. Before a partial pressure of a byproduct in the processing container produced through chemical reaction of the processing gases reaches an equilibrium state, the partial pressure of the byproduct in the processing container is temporarily reduced by temporarily suppressing or stopping the supply of at least one of the processing gases into the processing container and exhausting gas from the processing container.
Claims5
A method for creating a film-formation processing atmosphere, comprising the steps of:
- providing a film on a substrate in a processing container by supplying a plurality of processing gases into the processing container and forming the film from the processing gases on a surface of the substrate while exhausting a portion of the gases out of the processing container at all times;
- and
- before a partial pressure of a byproduct in the processing container produced through a chemical reaction of the processing gases reaches an equilibrium state, performing a partial pressure reducing step which temporarily reduces the partial pressure of the byproduct in the processing container.
Dependencies are inferred from the claim text.