Semiconductor device with improved breakdown voltage characteristics
AssigneeU.S. Philips Corporation
InventorDirk A. Vogelzang
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Abstract
A semiconductor device includes a semiconductor body (1, 2) with an island-shaped region (3) adjoining the surface, in which a contact pad (6) is provided above the island-shaped region (3) and separated therefrom by an insulating layer (5). The island-shaped region (3) forms a pn-junction (34) with an adjoining isolating region (4). According to the invention, the device is provided with regions (40, 41) for increasing the breakdown voltage of the pn-junction (34).
Claims3
A semiconductor device comprising a semiconductor body with an electrically-isolated island-shaped region of a first conductivity type adjoining a surface of the semiconductor body and being surrounded by an isolating region of a second, opposite conductivity type with which the island-shaped region forms a pn-junction, and means for maintaining said electrically-isolated island-shaped region at a floating potential, said means comprising the electrically-isolated island-shaped region being completely covered by a continuous insulating layer on which a contact pad is provided, the lateral extent of said contact pad being less than the lateral extent of said island-shaped region in all directions;
- and the device being provided with means for increasing the breakdown voltage of the pn-junction between the island-shaped region and the isolating region, said means being everywhere laterally spaced from said contact pad and extending around the periphery of said island-shaped region.
Dependencies are inferred from the claim text.