Spin-on-glass planarization process with ion implantation
AssigneeUnited Microelectronics Corp.
InventorsSun-Cheih Chien, Chen-Chiu Hsue, Yu-Ju Liu
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Abstract
A spin-on-glass sandwich layer planarization process where the spin-on-glass layer within the sandwich has been ion implanted through its entire thickness. The spin-on-glass sandwich layer is formed by successive deposition of a silicon oxide layer, followed by a spin-on-glass layer. The spin-on-glass layer is then thermally cured and ion implanted throughout its entire thickness. Various combinations of implanting ions, ion doses and implantation energies are used to implant the spin-on-glass layer. Finally, a second silicon oxide layer is formed upon the surface of the spin-on-glass layer to complete the spin-on-glass sandwich layer.
Claims10
A method for forming a moisture sorption and outgassing resistant spin-on-glass sandwich layer for integrated circuit applications, comprising:
- forming a first layer of silicon oxide over an integrated circuit surface;
- depositing a spin-on-glass layer over the first silicon oxide layer;
- thermally curing the spin-on-glass layer to form a cured spin-on-glass layer;
- implanting ions selected from the group of ions consisting of Monoatomic Boron, Nitrogen, Oxygen and Monoatomic Fluorine ions into and through the cured spin-on-glass layer, the ions being of sufficient dosage and energy to cause structural changes within the complete depth of the cured spin-on-glass layer, which structural changes cause the cured spin-on-glass layer to be moisture sorption and outgassing resistant;
- and
- depositing a second silicon oxide layer over the cured span-on-glass layer.
A method for forming a moisture sorption and outgassing resistant spin-on-glass sandwich layer for integrated circuit applications, comprising:
- forming a first layer of silicon oxide over an integrated circuit surface;
- depositing a spin-on-glass layer over the first silicon oxide layer;
- implanting ions selected from the group of ions consisting of Boron, Nitrogen, Oxygen and Fluorine ions into and through the spin-on-glass layer, the ions being of sufficient dosage and energy to cause structural changes within the complete depth of the spin-on-glass layer, which structural changes cause the spin-on-glass layer to be not susceptible to moisture sorption and outgassing;
- thermally curing then the spin-on-glass layer to form a cured spin-on-glass layer;
- and
- depositing a second silicon oxide layer over the cured spin-on-glass layer.
A method of providing a moisture sorption and outgassing resistant spin-on-glass layer of a planarized MOSFET multilayered metal structure comprising:
- providing a MOSFET semiconductor structure in and on a semiconductor substrate;
- providing a first conductive layer for contacting the active elements of the MOSFET structure;
- providing a first insulator layer over the first conductive layer;
- depositing a spin-on-glass layer over the first insulator layer;
- curing the spin-on-glass layer to form a cured spin-on-glass layer;
- implanting of ions selected from the group of ions consisting of Monoatomic Boron, Nitrogen, Oxygen and Monoatomic Fluorine ions into and through the cured spin-on-glass layer, the ions being applied in sufficient dosage and energy to cause structural changes within the complete depth of the cured spin-on-glass layer, which structural changes cause the cured spin-on-glass layer to be not susceptible to moisture sorption and outgassing;
- forming a second insulator layer over the ion implanted cured spin-on-glass layer;
- forming openings through the first and second insulator layers and the cured spin-on-glass layer to the conductive layer;
- and
- depositing a second conductive layer into the openings to make contact to the first conductive layer and complete the MOSFET multilayer metal structure.
Dependencies are inferred from the claim text.