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US 5,496,755 AGranted
Integrated circuit and method
AssigneeTexas Instruments Incorporated
InventorBurhan Bayraktaroglu
Life of this patent
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Abstract
Integrated circuits and fabrication methods incorporating both two-terminal devices such as IMPATT diodes (446) and Schottky diodes (454) and three-terminal devices such as n-channel MESFETs (480) in a monolithic integrated circuit.
Claims4
A method of fabricating an integrated circuit, comprising the steps of:
- (a) implanting contact doped regions in a semi-insulating semiconductor layer;
- (b) forming disconnected doped epitaxial semiconductor regions on said semiconductor layer and adjacent said contact regions;
- (c) forming diode regions and transistor channel regions in said epitaxial semiconductor regions;
- (d) forming diode terminals and transistor gates adjacent said diode regions and transistor channel regions;
- and
- (e) forming interconnections among said diodes and transistors.
3 more elements
Dependencies are inferred from the claim text.