Nondestructive readout-type ferroelectric memory device having twisted hysteresis

A ferroelectric memory device comprising:

• a plurality of memory cells arranged in a matrix, each memory cell including:
• a first ferroelectric capacitor which comprises a first ferroelectric member having a first film thickness and a first area, and a pair of electrodes comprising first and second electrodes formed on surfaces which each face the first ferroelectric member so as to hold the first ferroelectric member therebetween, the first ferroelectric capacitor having a first coercive field;
• and
• a second ferroelectric capacitor which comprises a second ferroelectric member having a second film thickness and a second area, wherein either said second film thickness differs from said first film thickness or said second area differs from said first area, a pair of electrodes comprising third and fourth electrodes formed on surfaces which each face the second ferroelectric member so as to hold the second ferroelectric member therebetween, the second ferroelectric capacitor having a second coercive field which is different from the first coercive field;
• and
• the first and second ferroelectric capacitors being connected parallel to each other via the first, second, third and fourth electrodes.