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AssigneeInternational Business Machines Corporation
InventorsThomas L. McDevitt, Scott L. Pennington, Michael A. Smey
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A process for decreasing the electrical resistance of a circuit element containing titanium metal, in applications requiring annealing in hydrogen, is disclosed. The process requires, prior to exposure to hydrogen, heating the titanium-containing circuit element in an inert, hydrogen-free atmosphere. The process thus involves a first step of annealing the titanium-containing circuit element in an inert, hydrogen-free atmosphere, such as nitrogen or other inert gas, at 300.degree. C. to 400.degree. C. for 10 to 60 minutes, followed by a second step of annealing in a hydrogen-containing atmosphere, such as hydrogen gas or forming gas, at 350.degree. C. to 450.degree. C. for at least 20 minutes. The resulting structures have both low resistance and tight variability.
A method for decreasing the electrical resistance of a titanium-containing circuit element at an aluminum, aluminum-copper, or aluminum oxide interface comprising a first step of annealing said titanium-containing circuit element in an inert, hydrogen-free atmosphere at 300.degree. C. to 400.degree. C. for 10 to 60 minutes, followed by a second step of annealing said titanium-containing circuit element in a hydrogen-containing atmosphere at 350.degree. C. to 450.degree. C. for at least 20 minutes.
A method for fabricating a contact comprising the sequential steps of:
A method for decreasing the electrical resistance of a titanium-containing circuit element at an interface with a silicon circuit element comprising a first step of heating said titanium-containing circuit element in an inert, hydrogen-free atmosphere at 300.degree. C. to 900.degree. C. for 5 to 60 minutes, followed by a second step of heating said titanium-containing circuit element in a hydrogen-containing atmosphere at 350.degree. C. to 900.degree. C. for at least 20 minutes.
A method for decreasing the electrical resistance of a titanium-containing circuit element at an interface with a titanium silicide circuit element comprising a first step of heating said titanium-containing circuit element in an inert, hydrogen-free atmosphere at 300.degree. C. to 900.degree. C. for 5 to 60 minutes, followed by a second step of heating said titanium-containing circuit element in a hydrogen-containing atmosphere at 350.degree. C. to 900.degree. C. for at least 20 minutes.
Dependencies are inferred from the claim text.