Method of fabrication of bilayer thin film resistor

A method of fabricating a bilayer thin film resistor, comprising the steps of:

• selecting a thickness of a first layer of a first resistive material to provide a sheet resistance for the bilayer thin film resistor.;
• depositing the first resistive material on a substrate to form a first layer having the selected thickness;
• depositing a second resistive material on the first layer to form a second layer of the bilayer thin film resistor with the thickness of the second layer being larger than the thickness of the first layer;
• and
• wherein the first resistive material comprises titanium tungsten.

A method of fabricating a bilayer thin film resistor, comprising the steps of:

• selecting a thickness of a first layer of a first resistive material to provide a sheet resistance for the bilayer thin film resistor;
• depositing the first resistive material on a substrate to form a first layer having the selected thickness;
• depositing a second resistive material on the first layer to form a second layer of the bilayer thin film resistor with the thickness of the second layer being larger than the thickness of the first layer;
• and
• wherein the thickness of the first layer is approximately 10 angstroms.

A method of fabricating a bilayer thin film resistor, comprising the steps of:

• selecting a thickness of a first layer of a first resistive material comprising titanium to provide a sheet resistance for the bilayer thin film resistor;
• depositing the first resistive material on a substrate to form a first layer having the selected thickness;
• depositing a second resistive material on the first layer to form a second layer of the bilayer thin film resistor with the thickness of the second layer being larger than the thickness of the first layer;
• and
• depositing a cap layer over the second layer wherein the cap layer comprises titanium.

A method of fabricating a bilayer thin resistor having first and second layers, comprising the steps of:

• depositing a first resistive material to form the first layer with the thickness selected to set the sheet resistance for the bilayer thin film resistor;
• sputter etching the first layer before depositing the second layer to increase the sheet resistance and heat stability of the bilayer resistor;
• and
• depositing a second resistive material over the first layer to form the second layer with a thickness greater than the thickness of the first layer, the thickness of the second layer being selected without regard to the affect on the sheet resistance of the bilayer thin film resistor.

A method of fabricating a bilayer thin film resistor having first and second layers, comprising the steps of:

• depositing a first resistive material to form the first layer with the thickness selected to set the sheet resistance for the bilayer thin film resistor;
• depositing a second resistive material over the first layer to form the second layer with a thickness greater than the thickness of the first layer, the thickness of the second layer being selected without regard to the affect on the sheet resistance of the bilayer thin film resistor;
• and
• wherein the first resistive material comprises titanium tungsten and the second resistive material comprises chromium silicon monoxide.

A method of fabricating a bilayer thin film resistor having first and second layers, comprising the steps of:

• depositing a first resistive material to form the first layer with the thickness selected to set the sheet resistance for the bilayer thin film resistor;
• depositing a second resistive material over the first layer to form the second layer with a thickness greater than the thickness of the first layer, the thickness of the second layer being selected without regard to the affect on the sheet resistance of bilayer thin film resistor;
• and
• wherein the first layer is selected to have a thickness of approximately 10 .ANG., and the second layer is selected to have a thickness in the range from 100 to 200 .ANG..