US 5,494,844 AGranted

Process of fabricating Bi-CMOS integrated circuit device

AssigneeNEC Corporation

InventorHisamitsu Suzuki

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Abstract

A process of fabricating a bi-CMOS integrated circuit device has a step of selectively growing doped polysilicon over a source/drain region and a part of base region exposed to contact holes formed in a silicon oxide layer without residue of the doped polysilicon on the silicon oxide layer, thereby preventing the bi-CMOS integrated circuit device from undesirable short circuit.

Claims4

Dependent claims

A process of fabricating an integrated circuit device, comprising the steps of:

a) preparing a semiconductor substrate structure;
b) forming at least one first active area of a first conductivity type and at least second and third active areas of a second conductivity type opposite to said first conductivity type in a surface portion of said semiconductor substrate structure;
c) forming at least one first field effect transistor of a first channel conductivity type, at least one second field effect transistor of a second channel conductivity type opposite to said first channel conductivity type and collector and base regions of at least one bipolar transistor in said first active area, said second active area and said third active area, respectively;
d) covering said first field effect transistor, said second field effect transistor and said collector and base regions with an insulating layer;
e) forming a first contact hole exposing a part of said base region in said insulating layer;
f) growing a first conductive layer of a substance on said part of said base region for filling said first contact hole without a residue of said substance left on said insulating layer, and having the sub-steps of
f-1) placing the resultant structure of said step e) in a reaction chamber,
f-2) introducing reactant gases for producing said substance, an etching gas being further introduced into said reaction chamber for restricting a growth of said substance except for a growth on said part of said base region,
f-3) introducing said etching gas into said reaction chamber for removing said substance left on said insulating layer, and
f-4) repeating said sub-steps of f-2) and f-3) until said first conductive layer fills said first contact hole;
g) depositing a silicide layer on the entire surface of the structure of said step f);
h) forming a second conductive layer from said silicide layer, said second conductive layer being held in contact with said first conductive layer for serving as an emitter electrode;
and
i) completing said integrated circuit device, and having a sub-step of diffusing a dopant impurity from said first conductive layer into said part of said base region for forming an emitter region of said bipolar transistor.

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Dependencies are inferred from the claim text.

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Abstract

A process of fabricating an integrated circuit device, comprising the steps of:

a) preparing a semiconductor substrate structure;
b) forming at least one first active area of a first conductivity type and at least second and third active areas of a second conductivity type opposite to said first conductivity type in a surface portion of said semiconductor substrate structure;
c) forming at least one first field effect transistor of a first channel conductivity type, at least one second field effect transistor of a second channel conductivity type opposite to said first channel conductivity type and collector and base regions of at least one bipolar transistor in said first active area, said second active area and said third active area, respectively;
d) covering said first field effect transistor, said second field effect transistor and said collector and base regions with an insulating layer;
e) forming a first contact hole exposing a part of said base region in said insulating layer;
f) growing a first conductive layer of a substance on said part of said base region for filling said first contact hole without a residue of said substance left on said insulating layer, and having the sub-steps of
f-1) placing the resultant structure of said step e) in a reaction chamber,
f-2) introducing reactant gases for producing said substance, an etching gas being further introduced into said reaction chamber for restricting a growth of said substance except for a growth on said part of said base region,
f-3) introducing said etching gas into said reaction chamber for removing said substance left on said insulating layer, and
f-4) repeating said sub-steps of f-2) and f-3) until said first conductive layer fills said first contact hole;
g) depositing a silicide layer on the entire surface of the structure of said step f);
h) forming a second conductive layer from said silicide layer, said second conductive layer being held in contact with said first conductive layer for serving as an emitter electrode;
and
i) completing said integrated circuit device, and having a sub-step of diffusing a dopant impurity from said first conductive layer into said part of said base region for forming an emitter region of said bipolar transistor.

11 more elements