Field progammable device with contact openings

A structure consisting of a portion of an integrated circuit device, comprising:

• a first patterned thin film conductive layer comprising aluminum;
• a first refractory metal layer disposed over said first patterned conductive layer;
• a first fusible dielectric layer, comprising a metal oxide or silicon nitride or oxide, disposed over a portion of said first refractory metal layer;
• a second refractory metal layer disposed over, and contacting, said first dielectric layer;
• a second dielectric layer, overlying said second refractory metal layer, and having a contact opening therein exposing a portion of said refractory metal layer, in a location where said second refractory metal layer overlies said first dielectric layer and said first dielectric layer overlies a portion of said first refractory metal layer;
• and
• a second patterned thin film metal layer disposed over a portion of said second refractory metal layer, and extending into said contact opening to make contact with said second refractory metal layer;
• wherein said first dielectric layer has a thickness sufficient to prevent wearout at operating voltages.

A structure consisting of a portion of an integrated circuit device, comprising:

• a first patterned thin film metal layer comprising aluminum;
• a first refractory metal layer disposed over said first metal layer;
• a first fusible dielectric layer, which is substantially flat, disposed over a portion of said first refractory metal layer;
• a second refractory metal layer disposed over, and contacting, said first dielectric layer;
• a second dielectric layer, overlying said second refractory metal layer, and having
• a first contact opening therein exposing a portion of said second refractory metal layer, in a location where said second refractory metal layer overlies said first dielectric layer and said first dielectric layer overlies a portion of said first metal layer, and
• a second opening therein exposing a portion of said first refractory metal layer;
• and
• a second patterned thin film metal layer disposed over a portion of said second dielectric layer, and extending into said first and second contact openings to make contact
• with said second refractory metal layer over said exposed first dielectric layer at said first opening, to thereby provide an antifuse, and
• with said first refractory metal layer at said second opening.