US 5,493,131 A · Diamond rectifying element

Abstract

The rectifying element is comprised of two electrodes, an undoped diamond film, and a B-doped p-type diamond film. The diamond films are formed of highly-oriented diamond films, of which at least 80% of the surface area consists of (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of crystal planes, simultaneously satisfy .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..bet a..vertline..ltoreq.5.degree. and .vertline..DELTA..gamma..vertline..ltoreq.5.degree. between adjacent crystal planes. The diamond rectifying element thus constructed have an excellent electrical characteristics, and multiple of the elements can be produced on a large area at low cost. The diamond rectifying elements can be used for heat-resistant and high-power rectifying elements.

Claims26

Dependent claims

A diamond rectifying element, comprising

a semiconducting layer of highly-oriented diamond film, in which at least 80% of the surface area of said diamond film consists of (100) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of the crystal planes, and simultaneously satisfy .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree., .vertline..DELTA..gamma..vertline..ltoreq.5.degree. between adjacent (100) crystal planes;
and
a pair of electrodes provided on a first face of said semiconductor layer.

Dependencies are inferred from the claim text.

Diamond rectifying element

Life of this patent

Diamond rectifying element

Life of this patent

Abstract

Claims26