Method for the controlled delivery of vaporized chemical precursor to an LPCVD reactor
AssigneeOsram Sylvania Inc.
InventorsKeith A. Klinedinst, Joseph E. Lester
Life of this patent
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Abstract
Method and apparatus for the controlled delivery of vaporized chemical precursor to a low pressure chemical vapor deposition (LPCVD) reactor. A flow of liquid precursor containing dissolved inert gas is passed through a restrictor element. The dissolved inert gas is released from the liquid precursor at or near the downstream side of the restrictor element. The inert gas is separated from the liquid precursor, thereby producing a continuous flow of liquid precursor, and this flow is fed into an inlet of a-vaporizer. The vaporized precursor is delivered into an LPCVD reactor.
Claims4
A method for the controlled delivery of a vaporized chemical precursor to a low-pressure chemical vapor deposition reactor comprising the steps of:
- providing a flow of liquid precursor containing a quantity of dissolved inert gas;
- restricting said flow of liquid precursor;
- separating said quantity of dissolved inert gas from said liquid precursor whereby a continuous flow of liquid precursor is produced;
- vaporizing said continuous flow of liquid precursor;
- and
- delivering said vaporized precursor to said low-pressure chemical vapor deposition reactor.
Dependencies are inferred from the claim text.