Crystal-growth method and semiconductor device production method using the crystal-growth method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKazuhiro Ohkawa, Tsuneo Mitsuyu
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Abstract
A crystal-growth method includes a process of filling three materials separately, one being selected from a group consisting of elemental Mg, MgS and MgSe compounds, and the other two being ZnSe and ZnS compounds, in their respective effusion cells, and a crystal-growth process of a Zn.sub.1-Y Mg.sub.Y S.sub.Z Se.sub.1-Z (0<Y>1 and 0<Z>1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
Claims19
A crystal-growth method comprising the steps of:
- filling three materials separately, one being selected from a group consisting of elemental Mg, MgS and MgSe compounds, and the other two being ZnSe and ZnS compounds, in their respective effusion cells, and
- growing a Zn.sub.1-Y Mg.sub.Y S.sub.Z Se.sub.1-Z (0<Y<1 and 0<Z<1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
A crystal-growth method comprising the steps of:
- filling two materials separately, one being selected from a group consisting of elemental Mg, MgS and MgSe compounds, and the other being a ZnS.sub.X' Se.sub.1-X' (0<X'<1) alloy in their respective effusion cells, and
- growing a Zn.sub.1-Y Mg.sub.Y S.sub.Z Se.sub.1-Z (0<Y<1 and 0<Z<1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
A crystal-growth method comprising the steps of:
- filling a Zn.sub.1-Y' Mg.sub.Y' S.sub.Z' Se.sub.1-Z' (0<Y'<1 and 0<Z'<1) alloy in an effusion cell, and
- growing a Zn.sub.1-Y Mg.sub.Y' S.sub.Z' Se.sub.1-Z' (0<Y<1 and 0<Z<1) single-crystalline thin film on a heated substrate by controlling the temperature of the effusion cell and the molecular beam intensity.
A crystal-growth method comprising the steps of:
- filling ZnSe and ZnS compounds separately in their respective effusion cells, and
- growing a ZnS.sub.X Se.sub.1-X (0<X<1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
A crystal-growth method comprising the steps of:
- filling a ZnS.sub.X' Se.sub.1-X' (0<X'<1) alloy in an effusion cell, and
- growing a ZnS.sub.X Se.sub.1-X (0<X<1) single-crystalline thin film on a heated substrate by controlling the temperature of the effusion cell and the molecular beam intensity.
A crystal-growth method comprising the steps of:
- filling two materials separately, one being selected from a group consisting of elemental Cd and CdSe compound, and the other being ZnSe compound, in their respective heating effusion cells and
- growing a Zn.sub.X CdSe.sub.1-X (0<X<1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
A crystal-growth method comprising the steps of:
- filling a Zn.sub.1-W' Cd.sub.W' Se (0<W'<1) alloy in an effusion cell, and
- growing a Zn.sub.1-W Cd.sub.W Se (0<W<1) single-crystalline thin film on a heated substrate by controlling the temperature of the effusion cell and the molecular beam intensity.
Dependencies are inferred from the claim text.