Semiconductor device having peripheral metal wiring
AssigneeYamaha Corporation
InventorNobuaki H. Tsuji
Life of this patent
Estimating the term…
Abstract
At a peripheral area of a semiconductor chip where active elements are not formed, a layer underlying a power supply wiring or ground wiring is provided with an uneven surface. The uneven or corrugated surface at the interface between the wiring and the underlying layer makes the wiring unsusceptible to slide. The uneven surface can be realized by interposing foreign matters between insulating layers, by selectively reducing the thickness of an insulating layer, or by forming openings in an insulating layer.
Claims18
A semiconductor device having at least one transistor including a gate electrode comprising a first material, comprising:
- (a) a semiconductor substrate on which the device is provided;
- (b) a first conductive layer having a plurality of conductive lines provided in spaced parallel relationship above a peripheral region of the semiconductor substrate, each of the plurality of conductive lines including the first material, the plurality of conductive lines extending lengthwise in parallel along a first direction;
- (c) an insulating layer formed over the first conductive layer, the insulating layer having a corrugated surface caused by the plurality of conductive lines;
- and
- (d) a second conductive layer formed on the insulating layer, the second conductive layer having a corrugated surface transferred from the insulating layer, the second conductive layer having a length greater than a width, the length of the second conductive layer extending along the first direction above the plurality of conductive lines of the first conductive layer.
A semiconductor device having at least one transistor including a gate electrode comprising a first material, comprising:
- (a) a semiconductor substrate on which the device is provided;
- (b) a first conductive layer having a plurality of conductive lines provided in spaced parallel relationship and extending lengthwise along a first direction above a peripheral region of the semiconductor, each of the plurality of conductive lines having an L-shape and including the first material;
- (c) an insulating layer formed over the first conductive layer, the insulating layer having a corrugated surface caused by the plurality of conductive lines;
- and
- (d) a second conductive layer formed on the insulating layer, the second conductive layer having a corrugated surface transferred from the insulating layer, wherein widths of each of the plurality of conductive lines are narrower than a width of the second conductive layer, a length of the second conductive layer extending along the first direction above the plurality of conductive lines of the first conductive layer.
Dependencies are inferred from the claim text.