Back to results
US 5,491,351 AGranted
Gate turn-off thyristor
AssigneeABB Management AG
InventorsFriedhelm Bauer, Peter Streit
Life of this patent
Estimating the term…
Abstract
A GTO having a cathode emitter (7) is specified, which cathode emitter has a low emission efficiency. This cathode emitter (7) provides a clearly increased resistance to the formation of current filaments. As a result, relatively high turn-off current densities can be reliably mastered. In addition, the fraction of the hole current in the total current is more than 10%. This is achieved, for example, by selecting the penetration depth as <1 .mu.m and the edge concentration as <10.sup.19 cm.sup.-3.
Claims20
A turn-off power semiconductor component comprising:
- a cathode-side and a anode-side main surface;
- a sequence of differently doped layers which are arranged between the cathode-side and the anode-side main surface, said sequence comprising, starting from the cathode-side main surface:
- a p-base, an n-base, and a p-doped anode emitter;
- said component further comprising, on the cathode-side main surface, a cathode and, on the anode-side main surface, an anode;
- said cathode being formed by a multiplicity of n-doped cathode emitter regions recessed in the p-base and being covered by a metal layer, and said anode being formed by said p-emitter covered by a metal layer;
- wherein said cathode emitter regions have a penetration depth of less than or equal to 2 .mu.m and a doping rate with an edge concentration of less than or equal to 10.sup.19 cm.sup.-3.
3 more elements
Dependencies are inferred from the claim text.