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US 5,491,113 AGranted
Method of manufacturing semiconductor device having a planarized surface
AssigneeKabushiki Kaisha Toshiba
InventorMasayuki Murota
Life of this patent
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Abstract
In a method of manufacturing a semiconductor device, an interlayer insulating film is formed along a surface of a semiconductor substrate having a stepped surface. A stopper surface is formed at least at a recess in the interlayer insulating film. The interlayer insulating film and the stopper film are polished until the interlayer insulating film and the stopper film are exposed on the same plane. The stopper film remaining after the polishing is etched and removed. The interlayer insulating film is polished and flattened.
Claims3
A method of manufacturing a semiconductor device, comprising the steps of:
- forming an interlayer insulating film along a surface of a semiconductor substrate having a stepped surface;
- forming a stopper film at least at a recess portion in said interlayer insulating film;
- polishing said interlayer insulating film and said stopper film until said interlayer insulating film and said stopper film are exposed on the same plane;
- etching and removing said stopper film remaining after said polishing step;
- and then
- polishing and flattening said interlayer insulating film.
3 more elements
Dependencies are inferred from the claim text.