Method of producing semiconductor integrated circuit device having interplayer insulating film covering substrate

A method of fabricating a semiconductor integrated circuit device comprising the steps of:

• covering a semiconductor substrate with a first insulating film;
• selectively forming a first conductive layer on said first insulating film, said first conductive layer having a top layer containing at least one of titanium and tungsten;
• combining fluorine with said at least one of titanium and tungsten on a surface portion of said top layer of said first conductive layer;
• and
• depositing, by means of chemical vapor deposition using an organic silicon compound and ozone, a silicon oxide film on a surface of said first insulating film and on said surface portion of said top layer of said first conductive layer, wherein said first conductive layer has fluorine combined with said at least one of titanium and tungsten on said surface portion of said top layer during said depositing step.