Method for forming a contact hole in a semiconductor device

A method for forming contact holes in contact regions in a semiconductor device comprising the steps of:

• forming a plurality of first conducting films;
• depositing a first insulating film on said first conducting films;
• forming a plurality of second conducting films on said first insulating film, wherein the first distance between said first conducting films is less than the second distance between said second conducting films;
• depositing a second insulating film to a thickness on said second conducting films;
• forming a first mask pattern on said second insulating film, wherein said first mask pattern has first contact areas which do not expose said second conducting films;
• a primary etching of a portion of said second insulating film by use of said first mask pattern, such that the possibly largest area of the second insulating film is etched in so far as said second conducting films are not exposed, thereby reducing topology at an upper portion of contact regions;
• removing said mask pattern;
• forming a second mask pattern having second contact areas which do not expose said first conducting films and are less than those of said first contact areas, said second contact areas being located in contact regions;
• a secondary etching of first and second insulating films by use of said second mask, thereby forming contact holes in the contact regions;
• and
• removing said second mask pattern.