Band-to-band resonant tunneling transistor

A band-to-band resonant tunneling transistor comprising:

• GaSb and InAs resonant tunneling layers separated by a thin barrier layer with a collector terminal connected to the InAs resonant tunneling layer;
• an InAs emitter layer separated from the GaSb resonant tunneling layer by another thin barrier layer with an emitter terminal connected to the InAs emitter layer;
• and
• an InAs base layer separated from the InAs resonant tunneling layer by a thick barrier layer with a base terminal connected to the InAs base layer.

A band-to-band resonant tunneling transistor comprising:

• a GaSb resonant tunneling layer sandwiched between first and second thin barrier layers, the GaSb resonant tunneling layer having a ground state quantized level;
• an InAs resonant tunneling layer having the first relatively thin barrier layer positioned thereon, the resonant tunneling layer further having a collector terminal connected thereto and a quantized level;
• a thick barrier layer having the InAs resonant tunneling layer positioned thereon;
• a first doped base layer of InAs having the thick barrier layer positioned thereon, the first doped base layer further having a base terminal connected thereto,
• a second doped layer of InAs positioned on the second thin barrier layer with an emitter terminal attached to the second doped layer of InAs, the second doped layer of InAs having a conduction band approximately aligned with the ground state quantized level of the GaSb resonant tunneling layer and cooperating with the GaSb resonant tunneling layer to operate as a carrier emitter;
• and
• the quantized level of the InAs resonant tunneling layer being misaligned with the ground state quantized level of the GaSb resonant tunneling layer in a quiescent state, the quantized level of the InAs resonant tunneling layer being movable into alignment with the ground state quantized level of the GaSb resonant tunneling layer with an application of a predetermined mount of bias to the terminal connected to the first doped layer of InAs, at which time the terminal connected to the InAs resonant tunneling layer operates as a collector.

A band-to-band resonant tunneling transistor comprising:

• a GaAs substrate having a planar surface;
• a buffer layer formed on the planar surface of the substrate;
• a first base layer of InAs doped with impurities to provide conductivity positioned on the buffer layer, a base terminal positioned in contact with the first base layer of InAs;
• a thick barrier layer positioned on the first layer of InAs;
• an InAs resonant tunneling layer positioned on the thick barrier layer, the InAs resonant tunneling layer having a quantized level and a collector terminal connected to the InAs resonant tunneling layer;
• a GaSb resonant tunneling layer sandwiched between first and second thin barrier layers with the first thin barrier layer positioned on the InAs resonant tunneling layer, the GaSb resonant tunneling layer having a ground state quantized level;
• a second layer of InAs doped with impurities to provide conductivity positioned on the second thin barrier layer, an emitter terminal positioned in contact with the second layer of InAs, the second layer of InAs having a conduction band approximately aligned with the ground state quantized level of the GaSb resonant tunneling layer and cooperating with the GaSb resonant tunneling layer to operate as a carrier emitter;
• and
• the quantized level of the InAs resonant tunneling layer being misaligned with the ground state quantized level of the GaSb resonant tunneling layer in a quiescent state, the quantized level of the InAs resonant tunneling layer being movable into alignment with the ground state quantized level of the GaSb resonant tunneling layer with an application of a predetermined mount of bias to the base terminal connected to the first layer of InAs, at which time the collector terminal connected to the InAs resonant tunneling layer operates as a collector of carriers.

A band-to-band resonant tunneling transistor comprising:

• a GaAs substrate having a planar surface;
• a buffer layer formed on the planar surface of the substrate;
• an InAs resonant tunneling layer positioned on the buffer layer, the InAs resonant tunneling layer having a quantized level and a terminal connected to the InAs resonant tunneling layer;
• a first thin barrier layer positioned on the InAs resonant tunneling layer and a GaSb resonant tunneling layer positioned on the first thin barrier layer, the GaSb resonant tunneling layer having a ground state quantized level;
• the first thin barrier layer and the GaSb resonant tunneling layer being separated into first and second portions with a terminal positioned on the GaSb resonant tunneling layer in the first portion;
• a second thin barrier layer positioned on the GaSb resonant tunneling layer in the second portion;
• a second layer of InAs doped with impurities to provide conductivity positioned on the second thin barrier layer, a terminal positioned in contact with the second layer of InAs, the second layer of InAs having a conduction band approximately aligned with the ground state quantized level of the GaSb resonant tunneling layer;
• and
• the quantized level of the InAs resonant tunneling layer being misaligned with the ground state quantized level of the GaSb resonant tunneling layer in a quiescent state, the quantized level of the InAs resonant tunneling layer being movable into alignment with the ground state quantized level of the GaSb resonant tunneling layer with an application of a predetermined mount of bias to the terminal connected to the GaSb resonant tunneling layer in the first portion.