Back to results
US 5,489,339 AGranted
Microelectronic processing machine
AssigneesSeiko Instruments Inc., Takao Hattori
InventorsTakeo Hattori, Masatoshi Yasutake
Life of this patent
Estimating the term…
Abstract
An electrode capable of pushing against a silicon substrate with a constant force is mounted inside a vacuum chamber or a gas-replacing chamber. A bias voltage source can supply a given electrical current between the silicon substrate and the electrode. A temperature-controlled heater and a positioning mechanism are mounted under the silicon substrate. A gas inlet nozzle for adjusting the ambient is mounted close to the location of the substrate.
Claims12
A microelectronic processing machine for forming a pattern on a surface of a sample substrate, comprising:
- a sample holding stage for holding the sample substrate at a processing location;
- an electrode disposed for contacting the surface of the sample substrate when the sample substrate is held by said holding stage;
- a force control system coupled to said electrode for pressing said electrode against the surface of the sample substrate with a force;
- a temperature control system for maintaining the surface of the sample substrate at a temperature when the sample substrate is held by said holding stage;
- a bias power supply connected for supplying a electrical current between said electrode and the sample substrate when the sample substrate is held by said holding stage;
- a weak current control system for detecting and controlling a weak current flowing between said electrode and the sample substrate when the sample substrate is held by said holding stage;
- an integrator connected to said weak current control system for time-integrating the weak current for a given time;
- a positioning mechanism coupled to said holding stage for moving the sample substrate when the sample substrate is held by said holding stage;
- a nozzle disposed for introducing reactive gasses to form a film on the surface of the sample substrate;
- and
- a chamber for confining the reactive gases with controlled partial pressures, wherein all of said sample holding stage, said electrode, said force control system, said temperature control system, said positioning mechanism, and said nozzle are mounted in said chamber.
8 more elements
Dependencies are inferred from the claim text.