Apparatus for forming a silicon oxide film on a silicon wafer
AssigneeKabushiki Kaisha Toshiba
InventorsMasako Kodera, Masami Watase, Shiro Mishima, Katsuya Okumura
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Abstract
Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.
Claims20
An apparatus for forming a silicon oxide film on a silicon wafer, comprising:
- means for keeping a supersaturated hydrofluoric acid solution of silicon oxide in a thickness not more than 20 mm;
- and
- means for heating the supersaturated solution until the solution reaches a thermal equilibrium.
An apparatus for forming a silicon oxide film on a silicon wafer, comprising:
- means for controlling the temperature of a supersaturated hydrofluoric acid solution of silicon oxide at about 25.degree. C. or lower;
- means for keeping said supersaturated solution on a silicon wafer in a thickness not more than 20 mm;
- and
- means for heating the supersaturated solution to 25.degree. to 70.degree. C.
An apparatus for forming a silicon oxide film on a silicon wafer, comprising:
- means for keeping a reacting solution of a temperature on the surface of a silicon wafer in a thickness not more than 20 mm;
- and
- means for heating the reacting solution until the solution reaches a thermal equilibrium.
Dependencies are inferred from the claim text.