Method for producing single crystal

Abstract

The present invention employs the construction wherein a resistor heater is disposed inside a protective cylinder whose tip is open to a molten liquid packing zone of a crucible inside a pulling apparatus so that the resistor heater is above the tip of a lower portion and temperature setting can be made so as to be capable of fusing a starting material. Since the tip of the protective cylinder is positioned inside the molten liquid at the time of pulling of a single crystal, the gaseous phase portion inside the protective cylinder and the gaseous phase portion inside the pulling apparatus are separated apart by the molten liquid and are independent of each other and a starting material polycrystal rod loaded into the protective cylinder can be supplied to the molten liquid surface inside the crucible while being molten at the lower part of the protective cylinder by the resistor heater. In this manner, the single crystal whose impurity concentration is substantially uniform in the longitudinal direction can be grown continuously.

Dependencies are inferred from the claim text.