Semiconductor crystal growth method
AssigneeMotorola, Inc.
InventorsHerng-Der Chiou, Tien-Yu T. Lee
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Abstract
A method of growing semiconductor crystals including inserting a single crystal seed (14) of a semiconductor material into a melt (12) and pulling the seed (14) at a first rate to gradually grow an elongated, single crystal first neck (15), altering the pulling rate to a second rate, slower than the first rate, to grow a shoulder (17) on the first neck (15) with a diameter greater than the first neck (15), continuing to pull at the second rate to form a second neck (18) with a diameter equal to the diameter of the shoulder (17), and altering the pulling rate to a third rate, slower than the second rate, to grow a single crystal elongated body (20) of the semiconductor material.
Claims13
A semiconductor crystal growth method comprising the steps of:
- providing a melt of a semiconductor material;
- inserting a single crystal seed of the semiconductor material into the melt of the semiconductor material;
- forming a single crystal ingot of the semiconductor material having a first neck, a second neck, and an elongated body, the second neck having a diameter larger than the first neck and less than the elongated body.
A method of growing semiconductor crystals comprising the steps of:
- providing a melt of a semiconductor material;
- inserting a single crystal seed of the semiconductor material into the melt of the semiconductor material and pulling the single crystal seed at a first rate to gradually grow an elongated, single crystal first neck of the semiconductor material having a diameter of approximately 3 mm to 6 mm to obtain zero dislocations in the elongated, single crystal first neck;
- altering pulling rate of the elongated, single crystal first neck to a second rate, slower than the first rate, to grow a shoulder on the elongated, single crystal first neck with a diameter greater than the elongated, single crystal first neck;
- continuing to pull the elongated, single crystal first neck and the shoulder at the second rate to form a second neck with a diameter in a range of approximately 10 mm to 50 mm, and until the second neck is grown approximately 25 mm to 75 mm long;
- and
- altering pulling rate of the elongated, single crystal first neck and the second neck to a third rate, slower than the second rate, to grow a single crystal elongated body of the semiconductor material with a desired diameter greater than the second neck.
A method of growing semiconductor crystals comprising the steps of:
- providing a melt of a semiconductor material;
- inserting a single crystal seed of the semiconductor material into the melt of the semiconductor material and pulling the single crystal seed at a first rate to gradually grow an elongated, single crystal first neck of the semiconductor material having a diameter of approximately 3 mm to 6 mm to obtain zero dislocations;
- gradually altering pulling rate of the elongated, single crystal first neck to a second rate, slower than the first rate, to grow a shoulder on the elongated, single crystal first neck in a range of approximately 25 mm to 75 mm long;
- and
- continuing to pull the elongated, single crystal first neck and the shoulder at the second rate to grow a single crystal elongated body of the semiconductor material with a diameter of at least 200 mm.
Dependencies are inferred from the claim text.