Method of producing white phosphorus for molecular beam epitaxy

A molecular beam epitaxial growth method of fabricating layered semiconductor structures employing phosphorus deposition comprising:

• a) supplying a valved pressure-stabilized phosphorus beam from a three-stage phosphorus effusion cell to an evacuated molecular beam epitaxy chamber, said three stages comprising:
• i) elevated temperature evaporation of red phosphorus;
• ii) condensation of white phosphorus at a temperature below said elevated temperature;
• and
• iii) cracking said white phosphorus;
• and
• b) conducting a phosphorus-deposition step from said phosphorus beam on to a substrate in said molecular beam epitaxy chamber.

A method for generating a phosphorus vapor beam rich in diatomic phosphorus suitable for use in epitaxial growth comprising the steps of:

• a) evaporating solid red phosphorus by heating said phosphorus under vacuum to a sublimation temperature sufficient to produce a phosphorus vapor stream;
• b) passing said vapor stream through a colder zone having a temperature lower than said sublimation temperature;
• and
• c) cracking said vapor stream at high temperature after exposure to said condensation surface to produce said phosphorus vapor beam rich in diatomic phosphorus;
• and
• d) valving said phosphorus vapor beam to output with a desired output pressure.