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US 5,479,040 AGranted
Charge pump circuit with field oxide regions
AssigneeTexas Instruments Incorporated
InventorsMichael C. Smayling, Luciano Talamonti
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Abstract
A charge pump (10) uses Schottky diodes (12) coupled to clock signals (o.sub.1 and o.sub.2) via respective capacitors (14a-d). Regulation and control circuitry 18 provides a stable voltage output and controls the clock circuitry (16).
Claims5
A semiconductor device comprising:
- first and second tank regions formed in a silicon substrate;
- a first field oxide region formed in said substrate between said first and second tank regions;
- a second field oxide region within said second tank region, said second field oxide region having a first edge and a second edge;
- a dielectric region overlying a portion of said first tank region;
- a polysilicon region overlying said dielectric region;
- a first contact region in said first tank region adjacent said polysilicon region, said first contact region more heavily doped than said first tank region;
- a second contact region in said second tank region adjacent said first edge of said second field oxide region, said second contact region more heavily doped than said second tank region;
- a Schottky diode region within said second tank region adjacent said second edge of said second field oxide region;
- and
- a metal layer overlying said Schottky diode region wherein said metal layer and said Schottky diode region form a Schottky diode.
7 more elements
Dependencies are inferred from the claim text.