Metallic circuit board and thin film diode array and method of manufacturing the same
AssigneeSharp Kabushiki Kaisha
InventorsMasahito Gotou, Kiyoshi Okano
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AssigneeSharp Kabushiki Kaisha
InventorsMasahito Gotou, Kiyoshi Okano
Estimating the term…
An object of the invention is to economically and easily manufacture a thin film diode of back-to-back connection type having a symmetric voltage-ampere characteristic. First conducting layers of a metallic circuit board to become a wiring and an island conductor, respectively, are electrically connected with each other via a second conducting layer. The first conducting layers are electrically isolated from each other by anodizing the second conducting layer. An anodized insulating layer is formed by oxidized parts of the first conducting layers and the oxidized second conducting layer. The not-anodized part of one of the first conducting layers becomes a wiring and the not-anodized part of the other of the first conducting layers becomes an island conductor. The island conductor is considered as a first conductor and second and third conductors are formed on the anodized insulating layer on the first conductor. Thereby, a two-terminal element of a back-to-back type is completed.
A method of manufacturing a metallic circuit board wherein at least
A method of manufacturing a metallic circuit board wherein at least
A thin-film diode array, comprising:
A method of manufacturing a thin-film diode array wherein, on one surface of an insulating substrate, there are formed
A method of manufacturing a thin-film diode array wherein, on one surface of an insulating substrate, there are formed
Dependencies are inferred from the claim text.