US 5,477,064 A · Thyristor

Abstract

An object of the present invention is to provide a semiconductor device which is designed so as to increase a maximum controllable current and decrease hold current without degrading its characteristic and to provide a method of manufacturing such a semiconductor device. A transistor formation region 3 and a P diffusion region 15 are selectively formed through an insulating film 4 between gate electrodes 5 on an N.sup.- epitaxial layer 2. In a transistor formation region 3, an N.sup.+ diffusion region 12 is formed on a P diffusion region 11, a P diffusion region 13 is formed on the N.sup.+ diffusion region 12, and an N.sup.+ diffusion region 14 is selectively formed on a surface of the P diffusion region 13. Then, a cathode electrode 7 is formed on the P diffusion region 13, N.sup.+ diffusion region 14 and P diffusion region 15, and an anode electrode 8 is formed on a second major surface of the P.sup.+ substrate 1. Due to a structural characteristic that an increase in current between electrodes 7 and 8 causes no latch-up phenomenon, etc., a maximum controllable current can be increased, and hold current can be decreased.

Claims15

Dependent claims

A semiconductor device comprising

a semiconductor substrate of a first conductivity type having first and second major surfaces;
a first semiconductor layer of a second conductivity type formed on said first major surface of said first semiconductor substrate;
a first semiconductor region of the first conductivity type selectively formed on said first semiconductor layer;
a second semiconductor region of the second conductivity type formed on said first semiconductor region;
a third semiconductor region of the first conductivity type formed on said second semiconductor region;
a fourth semiconductor region selectively formed in a surface of said third semiconductor region;
a first insulating film formed on side surfaces of said first and third semiconductor regions;
a first control electrode formed on said first insulating film;
a first main electrode formed on said third and fourth semiconductor regions independent of said first control electrode;
a second main electrode formed on said second major surface of said semiconductor substrate;
and
a fifth semiconductor region of the first conductivity type formed on said first semiconductor layer directly connecting said first and third semiconductor regions.

9 more elements

A semiconductor device comprising

a semiconductor substrate of a first conductivity type having first and second major surfaces;
a semiconductor buffer layer of a second conductivity type formed on said first major surface of said semiconductor substrate;
a first semiconductor layer of the second conductivity type formed on said semiconductor buffer layer, said first semiconductor layer being lower in impurity concentration than said semiconductor buffer layer;
a first semiconductor region of the first conductivity type selectively formed on said first semiconductor layer;
a second semiconductor region of the second conductivity type formed on said first semiconductor region;
a third semiconductor region of the first conductivity type formed on said second semiconductor region;
a fourth semiconductor region of the second conductivity type selectively formed in a surface of said third semiconductor region;
a fifth semiconductor region of the second conductivity type selectively formed in said second major surface of said semiconductor substrate;
a sixth semiconductor region of the first conductivity type formed on said first semiconductor layer to directly connect said first and third semiconductor regions;
a first insulating film formed on side surfaces of said first and third semiconductor regions;
a first control electrode formed on said first insulating film;
a first main electrode formed on said third and fourth semiconductor regions independent of said first control electrode;
and
a second main electrode formed on said second major surface of said semiconductor substrate including said fifth semiconductor region.

11 more elements

Dependencies are inferred from the claim text.

Thyristor

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Thyristor

Life of this patent

Abstract

Claims15