Method of manufacturing semiconductor device utilizing selective CVD method
AssigneeKabushiki Kaisha Toshiba
InventorsYoichi Ohshima, Hideaki Aochi
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Abstract
A method of manufacturing semiconductor devices includes the step of forming a first conductive region of a first conductive material for effecting a growth of a conductive film thereon by a selective growth method. Also, a second conductive region of a second conductive material for not effecting a growth of a conductive film is formed in the selective growth method. An insulating layer is covered with the first and second conductive regions. Further, a through hole in the insulating layer for filling the hole with the conductive film is formed. The conductive film is grown within the through hole over the first conductive region, thereby filling the through hole with the conductive film.
Claims34
A method of manufacturing semiconductor devices, which comprises the steps of:
- forming a first conductive region consisting of a first conductive material on a portion of a silicon region, and a second conductive region consisting of a second conductive material on a portion of said silicon region, which is different from the portion where said first conductive region is formed;
- forming an insulating layer all over a surface of said silicon region;
- forming through holes in said insulating layer to expose said first and second conductive regions;
- forming a silicon oxide layer on bottom surfaces of said through holes where said first conductive material is exposed, and forming an oxide layer comprising at least a metal oxide layer on bottom surfaces of said through holes where said second conductive material is exposed;
- removing said silicon oxide layer disposed on said first conductive material by etching while maintaining said oxide layer comprising at least a metal oxide layer on said second conductive material;
- depositing a third conductive material by using a selective growth method;
- and
- removing said oxide layer comprising at least a metal oxide layer on said second conductive material.
A method of manufacturing semiconductor devices, which comprises the steps of:
- forming a first conductive region consisting of a first conductive material on a portion of a semiconductor region, and a second conductive region consisting of a second conductive material on a portion of the semiconductor region which is different from the portion of the semiconductor region where said first conductive region is formed;
- forming a first insulating layer all over a surface of said semiconductor region;
- forming through holes in said first insulating layer to expose said first and second conductive regions;
- forming a silicon oxide layer on bottom surfaces of said through holes where said first conductive material is exposed, and forming an oxide layer comprising at least a metal oxide layer on bottom surfaces of said through holes where said second conductive material is exposed;
- removing said silicon oxide layer disposed on said first conductive material by etching while maintaining said oxide layer comprising at least a metal oxide layer on said second conductive material;
- depositing a third conductive material on said first conductive material by using a selective growth method;
- removing said oxide layer comprising at least a metal oxide layer on said second conductive material;
- forming a third conductive region consisting of a fifth conductive material above a portion of a semiconductor substrate, and a fourth conductive region consisting of a sixth conductive material above a portion of the semiconductor substrate which is different from the portion where said third conductive region is formed;
- forming a second insulating layer all over a surface of said semiconductor substrate;
- forming through holes in said second insulating layer to expose said third and fourth conductive regions;
- forming a silicon oxide layer on bottom surfaces of said through holes where said fifth conductive material is exposed, and forming an oxide layer comprising at least a metal oxide layer on bottom surfaces of said through holes where said sixth conductive material is exposed;
- removing said silicon oxide layer disposed on said fifth conductive material by etching while maintaining said oxide layer comprising at least a metal oxide layer on said sixth conductive material;
- depositing a seventh conductive material on said fifth conductive material by using a selective growth method;
- and
- removing said oxide layer comprising at least a metal oxide layer on said sixth conductive material.
Dependencies are inferred from the claim text.