Method for the deposition of diamond film by high density direct current glow discharge
AssigneeKorea Institute of Science and Technology
InventorsWook-Seong Lee, Young-Joon Baik, Kwang Y. Eun
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Abstract
There is disclosed a method for depositing a diamond film on a substrate which utilizes high density direct current glow discharge at a glow-arc transition region to form plasma between a cathode and an anode in a reactor, wherein the cathode maintains its temperature at a range of 2,100 to 2,300.degree. C. and is composed of a plurality of U-shaped filaments which are aligned parallel to one another to form an array and each of which is made by bending a conductive wire.
Claims3
A method for depositing a diamond film having a thickness up to 1 mm on a substrate which utilizes high density direct current glow discharge at a glow-arc transition region to form a plasma without generating arcs between a cathode and an anode in a reactor, which method comprises depositing the diamond film using a cathode comprising a plurality of U-shaped filaments which are aligned parallel to one another to form an array and each of which is made by bending a conductive wire and opposite ends of said U-shaped filaments are inserted into insertion holes which form two lines along opposite edges of a filament holder, in such a way that said U-shaped filaments are merely suspended parallel to one another, keeping the distance therebetween constant.
Dependencies are inferred from the claim text.