Method of production of single crystal
AssigneesNational Research Institute for Metals, National Space Development Agency of Japan
InventorsIsao Nakatani, Satoshi Takahashi, Isao Nishida, Kiyoshi Ozawa
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Abstract
A seed crystal is connected with a polycrystal at one end of the polycrystal, the connected crystal material is melted under a zero-gravity or microgravity environment without any container, and a single crystal is grown.
Claims7
A method of producing a single crystal, comprising the steps of connecting a seed crystal to one end of a polycrystal to form a connected crystal material, forming a thin film coating on a surface of the connected crystal material, said thin film coating containing one or more of the constituent elements of the connected crystal material and having a higher melting point than the connected crystal material, and melting the connected crystal material to form a melt without a container under a zero-gravity or microgravity environment, and causing the single crystal to grow.
Dependencies are inferred from the claim text.