Semiconductor device with a conductive reaction-preventing film

A semiconductor device comprising:

• a transistor having a gate electrode and source and drain regions, said gate electrode being located between said source and drain regions;
• an oxide layer located adjacent to said transistor;
• a capacitor having lower and upper platinum electrodes and a dielectric, comprised of a ferroelectric material, disposed between said electrodes, said capacitor being located directly over said oxide layer;
• a conductive, reaction-preventing film disposed over said upper platinum electrode and comprising a separate layer from said platinum electrodes and comprised of a different material than said platinum electrodes;
• and
• an aluminum wiring electrode disposed over said conductive, reaction-preventing film and comprised of a different material than said conductive, reaction-preventing film;
• wherein said conductive, reaction-preventing film is located between said upper platinum electrode and said aluminum wiring electrode to prevent a reaction between said upper platinum electrode and said aluminum wiring electrode that would adversely affect the ferroelectric material and wherein said wiring electrode extends from said conductive, reaction-preventing film over said upper electrode to said source region.