Back to results
US 5,474,877 AGranted
Method for developing a resist pattern
AssigneeNEC Corporation
InventorKatsumi Suzuki
Life of this patent
Estimating the term…
Abstract
A photoresist pattern developed on a semiconductor substrate is rinsed by rinsing liquid. At this rinsing step, the rinsing liquid is heated to be decreased in surface tension, so that the collapse of the photoresist pattern is avoided.
Claims6
A method for developing a photoresist pattern, comprising the steps of:
- coating a photoresist film on a semiconductor substrate;
- exposing said photoresist film on said semiconductor substrate to a predetermined pattern;
- supplying developer on said photoresist film on said semiconductor substrate to develop said photoresist pattern;
- heating rinsing liquid to its boiling point or within several degrees thereof;
- and
- thereafter supplying said heated rinsing liquid on said photoresist pattern developed on said semiconductor substrate to rinse said photoresist pattern, while separately heating a surface of said semiconductor substrate having said photoresist pattern thereon to a predetermined temperature of 50.degree. to 100.degree. C. during said rinsing liquid supplying step.
3 more elements
Dependencies are inferred from the claim text.