US 5,474,872 A · Polyvinyl alcohol-based photoresist

Abstract

A new photoresist composition suited for fine processing is provided which has practical applications in various dry etching processes. An advantageous pattern formation method using such a photo-resistive composition is also provided. The photoresist composition includes a substance containing a skeleton as at least a part of a main chain. The skeleton is obtained through polymerization of a vinyl alcohol type compound such as a polyvinyl alcohol chain, at least some hydroxyl groups in the skeleton being protected by acid-releasing protective groups. The skeleton preferably contains a group for improving the dry etching resistance. The photoresist composition also includes an optical acid generator. Development with a high polarity solvent, for instance aqueous development, is provided. A positive pattern is obtained by aqueous development, and a negative pattern is obtained by alcohol development.

Claims3

Dependent claims

A photoresist composition comprising:

(a) a copolymer derived from:
##STR39## alone or in combination with at least one comonomer selected from:
##STR40## wherein R.sup.0 is selected from ##STR41## groups, R.sup.10 is selected from adamantyl, norbonyl, cyclohexyl, cyclopentyl and t-butyl groups;
R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are selected from hydrogen, halogen, alkyl, chloromethyl, allyl, ##STR42## --COQ, --OAc and --CN groups, wherein Q is alkyl or cycloalkyl, and Ac is acetate;
and
(b) a photoacid generator, said composition being developable in a polar solution and exhibiting good dry etching resistance.

3 more elements

Dependencies are inferred from the claim text.

Polyvinyl alcohol-based photoresist

Life of this patent

Polyvinyl alcohol-based photoresist

Life of this patent

Abstract

Claims3