US 5,474,021 AGranted

Epitaxial growth of diamond from vapor phase

AssigneeSumitomo Electric Industries, Ltd.

InventorsTakashi Tsuno, Takahiro Imai, Naoji Fujimori

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Abstract

A plurality of single-crystalline diamond plates having principal surfaces consisting essentially of {100} planes are prepared. The diamond plates are so arranged that the respective principal surfaces are substantially flush with each other. In this arrangement, an angle formed by crystal orientations of the principal surfaces between adjacent plates is not more than 5.degree., a clearance between the adjacent plates is not more than 30 .mu.m, and a difference in height of the principal surfaces is not more than 30 .mu.m between the adjacent plates. To secure this arrangement, the plurality of diamond plates are joined to each other by depositing diamond on the plates to form a single large diamond plate. After such joining, the principal surfaces of the diamond plates are polished in order to eliminate steps or height differences. Then, diamond is epitaxially grown on a polished surface of the large diamond plate from a vapor phase. In this vapor phase, proportions X, Y and Z obtained from the following equations I, II and III respectively satisfy the following conditions: 0.5.ltoreq.X.ltoreq.2.0 0.3.ltoreq.Y.ltoreq.2.0 Z.ltoreq.1.0 X=([C]/[H]).times.100% I Y=([C]-[O]/[H]).times.100% II Z=([O]/[H]).times.100% III where [C], [O] and [H] represent molar numbers of carbon, oxygen and hydrogen atoms respectively. In this way it is possible to obtain vapor-deposited diamond having favorable characteristics.

Claims20

Dependent claims

A method of epitaxially growing diamond, comprising:

a) preparing a plurality of single-crystalline diamond plates having principal surfaces forming an angle of not more than 10.degree. with a {100} plane, back surfaces opposite said principal surfaces, and side surfaces between said principal surfaces and said back surfaces;
b) preparing an alignment plate having a flat surface;
c) arranging said diamond plates substantially adjacent one another on said alignment plate so that said principal surfaces are in contact with said flat surface of said alignment plate, wherein adjacent ones of said principal surfaces are no more than a 30 .mu.m step height out of flush alignment, adjacent ones of said side surfaces are substantially in contact with each other and have no more than a 30 .mu.m clearance therebetween, and crystal orientations relating to adjacent ones of said principal surfaces are not more than 5.degree. out of angular alignment;
d) depositing diamond on said back surfaces of said arranged diamond plates so that said diamond plates are bonded with each other;
e) separating said bonded diamond plates from said alignment plate, wherein said principal surfaces that had been in contact with said alignment plate together form a larger substrate surface;
and
f) epitaxially growing diamond on said larger substrate surface from a vapor phase containing at least carbon and hydrogen, wherein proportions X, Y and Z, as follows:
X=([C]/[H]).times.100%
Y=([C]-[O]/[H]).times.100%
Z=([O]/[H]).times.100%
where [C], [O] and [H] represent molar numbers of carbon, oxygen and hydrogen atoms respectively, satisfy the following conditions:
0.5.ltoreq.X.ltoreq.2.0
0.3.ltoreq.Y.ltoreq.2.0
Z.ltoreq.1.0

11 more elements

Dependencies are inferred from the claim text.