US 5,473,182 AGranted

Semiconductor device

AssigneeNEC Corporation

InventorKouichi Kumagai

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Abstract

A semiconductor device has protective devices formed in a P-type semiconductive region maintained at a ground potential and disposed adjacent to bonding pads connected to internal circuitry through respective signal lines. A plurality of first N+ diffusion regions connected to respective signal lines and a second diffusion region connected to a ground line are disposed in the P-type semiconductive region. A separating region having a thick insulating layer is disposed between the first diffusion regions and the second diffusion region. The protective devices formed as NPN transistors have a common emitter at the second N+ diffusion region, which has enough area for storing and discharging electric charges to the ground, while the occupied area of the protective devices is maintained small. The protective devices can be formed as so-called field MOS transistors having a common source.

Claims10

Dependent claims

A semiconductor device having a plurality of signal lines extending from associated ones of a plurality of bonding pads and a plurality of protective devices connected to associated ones of said signal lines, said semiconductor device comprising:

a semiconductor substrate;
a first semiconductor region of a first conductivity type selectively formed in said semiconductor substrate and having a plurality of first portions;
a single common second semiconductor region of a second conductivity type opposite to said first conductivity type selectively formed in said first semiconductor region and having a plurality of second portions;
a plurality of third semiconductor regions of said second conductivity type selectively formed in said first semiconductor region separately from one another and adjacently to an associated one of said second portions of said single common second semiconductor region with an intervention of an associated one of said first portions of said first semiconductor region;
each of said protective devices being constituted by an associated one of said third semiconductor regions, an associated one of said second portions of said single common second semiconductor region and an associated one of said first portions of said first semiconductor region;
an insulating film covering said first, single common second and third semiconductor regions;
each of said signal lines being formed on said insulating film to cross an associated one of said second portions of said single common second semiconductor region, an associated one of said third semiconductor regions and an associated one of said first portions of said first semiconductor region, and being isolated therefrom by said insulating film;
and
a plurality of contact holes each selectively formed in said insulating film to connect an associated one of said third semiconductor regions to an associated one of said signal lines.

6 more elements

A semiconductor device comprising:

a semiconductor substrate;
a semiconductor layer of a first conductivity type selectively formed in said semiconductor substrate and having a plurality of first portions;
a common strip region of a second conductivity type opposite to said first conductivity type selectively formed in said semiconductor layer and having a plurality of second portions;
a plurality of semiconductor regions of said second conductivity type selectively formed in said semiconductor layer along said common strip region, each of said semiconductor regions facing an associated one of said second portions of said common strip region with an intervention of an associated one of said first portions of said semiconductor layer;
a first insulating film covering said semiconductor layer, said common strip region and said semiconductor regions;
a plurality of contact holes each selectively formed in said first insulating film to expose a part of an associated one of said second portions of said common strip region;
a common conductive layer selectively formed on said first insulating film to cover each of said first portions of said semiconductor layer with an intervention of said first insulating film and having a plurality of third portions each formed in contact with said part of an associated one of said second portions of said common strip region;
a second insulating film covering said first insulating film and said common conductive layer;
a plurality of signal lines each formed on said second insulating film so as to cross said semiconductor layer, said common strip region and said semiconductor regions and be isolated therefrom by said first and second insulating films;
a power line formed on said second insulating film so as to cross said semiconductor layer and said common strip region and be isolated therefrom by said first and second insulating films;
a plurality of first connection conductive layers each selectively formed in said first and second insulating films to connect an associated one of said semiconductor regions to an associated one of said signal lines;
and
a second connection conductive layer selectively formed in said first and second insulating films to connect said common strip region to said power line.

10 more elements

Dependencies are inferred from the claim text.

Facts

Application: 08/286,993Filed 8 Aug 1994 · continuation
Priority: JP 4-1739241 Jul 1992
Granted: 5 Dec 1995
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10D 89/60
Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00: integrated devices comprising arrangements for electrical or thermal…
H10D 89/711
For devices having insulated gate electrodes, e.g. for IGFETs or IGBTs: using bipolar transistors as protective elements
H10D 89/811
For devices having insulated gate electrodes, e.g. for IGFETs or IGBTs: using FETs as protective elements
H10D
Inorganic electric semiconductor devices