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US 5,473,181 AGranted
Integrated circuit arrangement having at least one power component and low-voltage components
AssigneeSiemens Aktiengesellschaft
InventorsUdo Schwalke, Michael Stoisiek
Life of this patent
Estimating the term…
Abstract
In an integrated circuit arrangement having at least one power component and low-voltage components, the at least one power component is realized in a semiconductor substrate. At least one contact of the power component is arranged on a principal surface of the substrate. The contact is covered with an insulation layer at a surface of which at least one thin-film component, particularly a thin-film transistor, is provided above the contact.
Claims9
An integrated circuit arrangement, comprising:
- at least one power component and a low-voltage component;
- said at least one power component being integrated in a semiconductor substrate;
- at least one contact of the power component being arranged on a principle surface of the substrate and a connection contact level connected to the contact and which extends across and above said principle surface;
- an insulating layer covering the connection contact level;
- and
- at least one thin-film component formed of one of the elements selected from the group consisting of an amorphous semiconductor material and a polycrystalline semiconductor material as said low-voltage component positioned above the connection contact level and the at least one power component so that the connection contact level lies between the at least one power component and the at least one thin-film component so that the connection contact level shields the thin-film component against electrical fields occurring in the substrate.
3 more elements
An integrated circuit arrangement, comprising:
- at least one power component integrated in a semiconductor substrate;
- said power component having a region at a principal surface of the substrate to which is connected a contact metallization level which runs laterally over the principal surface of the substrate and over the at least one power component;
- an insulation layer on the contact metallization level;
- and
- a thin film component on the insulation layer above the at least one power component, the contact metallization level being positioned between the thin film component and the at least one power component so that it shields the thin-film component against electrical fields occurring in the substrate associated with the at least one power component.
2 more elements
Dependencies are inferred from the claim text.