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US 5,473,177 AGranted
Field effect transistor having a spacer layer with different material and different high frequency characteristics than an electrode supply layer thereon
AssigneeSumitomo Electric Industries, Ltd.
InventorShigeru Nakajima
Life of this patent
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Abstract
There is disclosed a field effect transistor having a channel layer, an electron supply layer, and a spacer layer formed between the channel layer and the electron supply layer. The spacer layer has a thickness for spatially separating a two-dimensional electron gas from donor ions in the electron supply layer, and for forming the two-dimensional electron gas in the channel layer by the Coulomb force of the donor ions. The spacer layer material has better high frequency characteristics than that of the electron supply layer.
Claims6
A field effect transistor comprising:
- an electron supply layer formed by a first material, said first material of said electron supply layer being doped to have donors therein,
- a channel layer in which a two-dimensional electron gas is generated by Coulomb force corresponding to said donors in said electron supply layer, and
- a spacer layer formed between said channel layer and said electron supply layer, said spacer layer being formed of a second material for spatially separating said two-dimensional electron gas from said donors in said electron supply layer,
- said electron supply layer and said spacer layer being formed of different elements,
- said second material having a better high frequency characteristic and having a higher electron saturation speed than that of said first material, and
- said second material having a lower electron mobility than that of said channel layer and a higher electron saturation than that of the material of said channel layer.
3 more elements
Dependencies are inferred from the claim text.