Hetero junction bipolar transistor
AssigneeRohm Co., Ltd.
InventorKeita Nii
Life of this patent
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Abstract
A hetero junction bipolar transistor which is high both in operating speed and in gain. The hetero junction bipolar transistor has a base layer consisting of Si (silicon) grown laterally by epitaxial growth, which isolates a collector region and an external base region from each other.
Claims1
A hetero junction bipolar transistor comprising a silicon substrate having first and second sides and forming a collector region at the first side, an insulating layer having first and second sides, the first side being formed on the second side of the substrate and having an opening exposing the substrate, an epitaxial layer formed on the substrate in the opening in the insulating layer and extending on the second side of the insulating layer, an emitter region formed on the epitaxial layer over the opening in the insulating layer, the epitaxial layer containing an external base region formed on the second side of the insulating layer so that the collector region in the substrate and the external base region are separated from each other by the insulating layer, thereby reducing the flow of current from the collector region to the base region, an emitter electrode on the emitter region and a collector electrode on a portion of the collector region which is on the first side of the substrate.
Dependencies are inferred from the claim text.