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US 5,473,170 AGranted
Semiconductor protection component
AssigneeSGS-Thomson Microelectronics S.A.
InventorEric Bernier
Life of this patent
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Abstract
A gateless thyristor or a gateless triac with shorting holes having a sharp switching threshold and a high current value I.sub.H includes, a first area having a first density of shorting holes and a second area having a second density of shorting holes lower than the first density.
Claims9
A semiconductor protection component, comprising:
- gate layer;
- a cathode layer disposed on the gate layer, the cathode layer having a first surface, and a plurality of shorting holes through the cathode layer for coupling the gate layer to the first surface wherein the shorting holes include portions of the gate layer;
- a first zone of the protection component having a first density of shorting holes;
- and
- a second zone of the protection component having a second density of shorting holes, wherein the second density is different from the first density;
- wherein the first zone substantially determines a first set of electrical characteristics of the component, and the second zone substantially determines a second set of electrical characteristics of the component, the first set of characteristics being different from the second set of characteristics;
- and
- wherein a pitch of the shorting holes in the first zone equals a pitch of the shorting holes in the second zone and the shorting holes in the second zone have a diameter less than a diameter of the shorting holes in the first zone.
5 more elements
A semiconductor protection component, comprising:
- a gate layer;
- a cathode layer disposed on the gate layer, the cathode layer having a first surface, and a plurality of shorting holes through the cathode layer for coupling the gate layer to the first surface wherein the shorting holes include portions of the gate layer;
- a first zone of the protection component having a first density of shorting holes;
- and
- a second zone of the protection component having a second density of shorting holes, wherein the second density is different from the first density;
- wherein the first zone substantially determines a first set of electrical characteristics of the component, and the second zone substantially determines a second set of electrical characteristics of the component, the first set of characteristics being different from the second set of characteristics;
- and
- wherein a pitch of a first group of shorting holes in the first zone equals a pitch of shorting holes in the second zone and further comprising an additional group of shorting holes having a diameter less than a diameter of the first group of shorting holes disposed in the first zone.
5 more elements
A semiconductor protection component, comprising:
- a gate layer;
- a cathode layer, having a first surface, disposed on the gate layer;
- shorting hole means for coupling the gate layer to the first surface comprising at least a portion of the gate layer;
- a first zone of the protection component having a first density of shorting holes;
- and
- a second zone of the protection component having a second density of shorting holes, wherein the second density is different from the first density;
- wherein the first zone substantially determines a first set of electrical characteristics of the component, and the second zone substantially determines a second set of electrical characteristics of the component, the first set of characteristics being different from the second set of characteristics;
- and
- wherein a pitch of the shorting holes in the first zone equals a pitch of the shorting holes in the second zone and the shorting holes in the second zone have a diameter less than a diameter of the shorting holes in the first zone.
6 more elements
A semiconductor protection component, comprising:
- a gate layer
- a cathode layer, having a first surface, disposed on the gate layer;
- shorting hole means for coupling the gate layer to the first surface comprising at least a portion of the gate layer;
- a first zone of the protection component having a first density of shorting holes;
- and
- a second zone of the protection component having a second density of shorting holes, wherein the second density is different from the first density;
- wherein the first zone substantially determines a first set of electrical characteristics of the component, and the second zone substantially determines a second set of electrical characteristics of the component, the first set of characteristics being different from the second set of characteristics;
- and
- wherein a pitch of a first group of shorting holes in the first zone equals a pitch of shorting holes in the second zone and further comprising an additional group of shorting holes having a diameter less than a diameter of the first group of shorting holes disposed in the first zone.
6 more elements
In a gateless semiconductor protection component including a gate layer, a cathode layer, having a first surface, disposed on the gate layer and a plurality of shorting holes through the cathode layer for coupling the gate layer to the first surface, wherein the shorting holes include portions of the gate layer, the improvement comprising:
- a first zone of the cathode layer having a first density of shorting holes and a second zone having a second density of shorting holes, wherein the second density is lower than the first density, and
- wherein the second zone is surrounded by the first zone.
A semiconductor protection component, comprising:
- a gate layer;
- a cathode layer disposed on the gate layer, the cathode layer having a first surface, and a plurality of shorting holes through the cathode layer for coupling the gate layer to the first surface wherein the shorting holes include portions of the gate layer;
- a first zone of the cathode layer having a first density of shorting holes;
- and
- a second zone of the cathode layer having a second density of shorting holes, wherein the second density is different from the first density;
- wherein the first and second zones are constructed and arranged to yield a low breakover voltage, a low hold current, and a high dI/dt of the component;
- wherein the density of shorting holes is greater in the first zone, and wherein the second zone is surrounded by the first zone.
4 more elements
A semiconductor protection component, comprising:.
- a gate layer;
- a cathode layer, having a first surface, disposed on the gate layer;
- shorting hole means for coupling the gate layer to the first surface comprising at least a portion of the gate layer;
- a first zone of the cathode layer having a first density of shorting holes;
- a second zone of the cathode layer having a second density of shorting holes, wherein the second density is different from the first density;
- and
- means for selecting the first and second densities and relative positions of the first and second zones to provide the semiconductor protection component with a low breakover voltage, a low hold current, and a high turn-on dI/dt;
- wherein the density of shorting holes is greater in the first zone;
- and
- wherein the second zone is surrounded by the first zone.
7 more elements
Dependencies are inferred from the claim text.