Method for controlling electromigration and electrically conductive interconnect structure therefor

A method for controlling electromigration in an electrically conductive interconnect, having a bamboo structure, comprising the steps of:

• providing a substrate having a major surface;
• forming a first set of grooves in a portion of the substrate, the first set of grooves extending from the major surface into the substrate, wherein each groove of the first set of grooves further comprises a first end and a second end, and wherein the first end of one groove of the first set of grooves is spaced apart from the second end of another groove of the first set of grooves by at least 0.6 microns;
• forming a second set of grooves in a portion of the substrate, the second set of grooves extending from the major surface into the substrate, wherein each groove of the second set of grooves further comprises a first end and a second end, and wherein the first end of one groove of the second set of grooves is spaced apart from the second end of another groove of the second set of grooves by at least 0.6 microns;
• and
• forming the electrically conductive interconnect between the first and second sets of grooves wherein the first set of grooves and the second set of grooves serve to control electromigration by controlling polycrystal and single crystal segment lengths within a microstructure of the electrically conductive interconnect.

A method for controlling grain structure of a conductive interconnect to reduce electromigration in the conductive interconnect, comprising the steps of:

• providing a substrate having a major surface;
• patterning a portion of the major surface, wherein the step of patterning comprises forming at least one furrow extending into the major surface:
• forming a layer of conductive material on the major surface, wherein the layer of conductive material covers a portion of the patterned portion of the major surface;
• and
• removing a portion of the layer of conductive material from the substrate to form the conductive interconnect on the patterned portion of the major surface, wherein the patterned portion of the major surface controls the grain structure of the conductive interconnect having a bamboo structure.