Method for manufacturing a power semiconductor component for high speed current switching
AssigneeEupec Europaeische Gesellsch. F. Leitsungshalbleiter mbH & Co. KG
InventorsWolfgang Pikorz, Alois Sonntag
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Abstract
The destruction-free rapid dismantling of current of power semiconductor components can be substantially enhanced when the inhibiting pn-junction is produced with a polished surface of the semiconductor body. The pn-junction thus becomes so uniform that local overloads are avoided. As a result, the speed of the dismantling of the current of the power semiconductor can be increased.
Claims11
Method for manufacturing a power semiconductor component comprising the steps of:
- providing a semiconductor body of a first conductivity type and having at least one planar surface;
- polishing said at least one planar surface of said semiconductor body to produce a polished first surface with an average deviation of less than 0.1 .mu.m;
- and
- producing a zone of a second conductivity type in said semiconductor body proceeding from said polished first surface and leaving a zone of said first conductivity type adjacent to said zone of said second conductivity type with a junction between said zones.
Method for manufacturing a power semiconductor component including an inner zone of a first conductivity type and being doped with a first doping concentration, a first outer zone of a second conductivity type adjoining the inner zone and being doped with a doping concentration greater than the first doping concentration, and a second outer zone adjoining the inner zone and being doped with a doping concentration greater than the first doping concentration, the method comprising the steps of:
- providing a semiconductor body having a first conductivity type and having at least one planar surface;
- polishing said at least one planar surface of said semiconductor body to produce a polished first surface with an average deviation of less than 0.1 .mu.m;
- and
- producing the first outer zone proceeding from said polished first surface and leaving a zone of said first conductivity type adjacent to said first outer zone of said second conductivity type with a junction between said zones.
Dependencies are inferred from the claim text.