Back to results
US 5,472,903 AGranted
Isolation technology for sub-micron devices
AssigneeUnited Microelectronics Corp.
InventorsWater Lur, Cheng-Han Huang
Life of this patent
Estimating the term…
Abstract
A new isolation technology fabrication process is provided including the step of forming a trench in a semiconductor material. Then, several poly walls are formed in the trench. The poly walls are oxidized to form a single oxide isolation region filling the trench.
Claims8
A process for fabricating a semiconductor comprising the steps of:
- forming a trench in a semiconductor material,
- forming a plurality of spaced apart spacers in said trench,
- forming a plurality of spaced apart poly walls adjacent to sides of each of said spacers,
- etching said spacers, and
- oxidizing said poly walls to form a single oxide region filling said trench.
2 more elements
A process for fabricating a semiconductor comprising the steps of:
- forming a trench in a semiconductor material,
- forming a plurality of spaced apart poly walls in said trench, and
- oxidizing said poly walls to form a single oxide region filling said trench, wherein said step of forming said spaced apart poly walls comprises the steps of:
- forming at least one Si.sub.3 N.sub.4 region in said trench,
- forming a plurality of poly walls on edges of said at least one Si.sub.3 N.sub.4 region, and
- forming at least one groove separating said poly walls by etching said at least one Si.sub.3 N.sub.4 region.
3 more elements
Dependencies are inferred from the claim text.