Process for formation of vias (or contact openings) and fuses in the same insulation layer with minimal additional steps

A process for forming an integrated circuit structure comprising one or more metal fuses on an insulation layer formed over other portions of said integrated circuit structure while filling one or more vias or contact openings in said insulation layer with the same metal comprising the steps of:

• a) forming a rectangular recess mask layer over said insulation layer;
• b) forming one or more rectangular recesses in said insulation layer by etching said insulation layer through said rectangular recess mask;
• c) forming a via or contact opening mask over said insulation layer after etching said insulation layer through said rectangular recess mask to form said one or more rectangular recesses in said insulation layer;
• d) forming one or more vias or contact openings through said insulation layer to said integrated circuit structure beneath said insulation layer by etching said insulation layer through said via or contact opening mask;
• e) subsequently filling said one or more rectangular recesses and said one or more vias or contact openings with a tungsten-containing metal by depositing a tungsten-containing metal layer over said insulation layer;
• f) then planarizing said deposited tungsten-containing metal layer down to said vias or contact openings to remove those portions of said tungsten-containing metal layer which were deposited over said insulation layer, leaving tungsten-containing metal stringers on sidewalls of said one or more rectangular recesses;
• and
• g) then forming one or more aluminum metal lines on said insulation layer in electrical contact with at least one end of one or more of said tungsten-containing metal stringers;
• whereby said metal stringers in contact with said one or more metal lines are formed while filling said vias or contact openings with metal, and said metal stringers will function as a fuse between said one or more aluminum metal lines and other portions of said integrated circuit structure in electrical contact with an opposite end of said tungsten-containing metal stringers in contact with said one or more aluminum metal lines.