Ferroelectric capacitive element
AssigneesOlympus Optical Co., Ltd., Symetrix Corporation
InventorTakashi Mihara
Life of this patent
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Abstract
A ferroelectric capacitive element according to the present invention includes a substrate constituted by a silicon oxide, glass, or the like, an adhesive layer of Ti or the like formed on the substrate, a lower electrode formed on the adhesive layer and constituted by any one of Pt, Pd, Ag, Au and the like, a ferroelectric film 14 formed on the lower electrode, a conductive oxide film formed on the ferroelectric film, and an upper electrode formed on the conductive oxide film and constituted by a metallic material other than precious metal, such as Al, Al alloy, AlSi, AlNi, Ni alloy, Cu alloy, AlCu.
Claims12
A ferroelectric capacitive element comprising:
- a substrate constituted by an insulator;
- a lower electrode formed on said substrate and constituted by precious metal;
- a ferroelectric thin film formed on said lower electrode and constituted by a ferroelectric;
- a conductive oxide film formed on said ferroelectric thin film and having a reduction power which is higher than a reduction power of said ferroelectric thin film;
- and
- an upper electrode formed on said conductive oxide film and constituted by at least one metallic material other than precious metal.
A ferroelectric capacitive element comprising:
- a substrate constituted by an insulator;
- a first lower electrode formed on said substrate and constituted by precious metal;
- a second lower electrode formed on said first lower electrode and constituted by a first conductive oxide film;
- a ferroelectric thin film formed on said second lower electrode and constituted by a ferroelectric;
- a second conductive oxide film formed on said ferroelectric thin film and having a reduction power which is higher than a reduction power of said ferroelectric thin film;
- and
- an upper electrode formed on said second conductive oxide film and constituted by at least one metallic material other than precious metal.
A ferroelectric capacitive element comprising:
- a substrate constituted by an insulator;
- a first lower electrode formed on said substrate and constituted by precious metal;
- a second lower electrode formed on said first lower electrode and constituted by a first conductive oxide;
- a ferroelectric thin film formed on said second lower electrode and constituted by a ferroelectric;
- a second conductive oxide film formed on said ferroelectric thin film and having a reduction power which is higher than a reduction power of said ferroelectric thin film;
- a refractory metal film formed on said second conductive oxide film and constituted by adhesive precious metal having a high melting point;
- and
- an upper electrode formed on said refractory metal film and constituted by at least one metallic material other than precious metal.
A ferroelectric capacitive element comprising:
- a substrate constituted by an insulator;
- a lower electrode formed on said substrate and constituted by precious metal;
- a second lower electrode formed on said first lower electrode and constituted by a first conductive oxide film;
- a ferroelectric thin film formed on said lower electrode and constituted by a ferroelectric;
- a second conductive oxide film formed on said ferroelectric thin film and having a reduction power which is higher than a reduction power of said ferroelectric thin film;
- and
- an upper electrode formed on said second oxide film and constituted by at least one metallic material other than precious metal.
Dependencies are inferred from the claim text.