Semiconductor device and a method for manufacturing the same

A semiconductor device having an electrostatic discharge protection device, in which the electrostatic discharge protection device comprises a vertical type bipolar transistor including,

• a semiconductor substrate,
• an epitaxial layer laminated on the semiconductor substrate,
• a buried collector of a first conductive type which is formed of the semiconductor substrate or which is formed from the surface of the semiconductor substrate to the epitaxial layer,
• a base of a second conductive type which is a lightly doped well and formed on the epitaxial layer,
• an emitter of the first conductive type and formed on the surface layer of the base of the second conductive type and
• a collector sinker region of the first conductive type which is adjacent to the base of the second conductive type and provided with a collector contact diffusion region;
• the base comprising a highly doped diffusion layer of the second conductive type, which contacts at least with the collector contact diffusion region in the collector sinker region of the first conductive type,
• the depth of the diffusion of the base of the second conductive type being in the range from 0.8 to 2.3 microns, and
• the base type and the emitter being shorted with each other.