Thin-film transistor circuit having an amorphous silicon load and a driver transistor and a method of producing the same

A thin-film transistor circuit for a logic gate circuit, comprising:

• a continuous amorphous silicon layer substantially having a uniform thickness;
• a load device formed in said continuous amorphous silicon layer and made of n.sup.- amorphous silicon;
• a supply line electrically connected to said load device, for applying a supply voltage to said load device;
• an output line electrically connected to said supply line through said load device, for outputting logic level voltages;
• a first driver transistor having a gate electrode, a source region, a drain region, and a channel region, said source, drain, and channel regions being formed in said continuous amorphous silicon layer, for being switched based on a voltage applied to said gate electrode, said source regions of said first driver transistor being connected to said output line;
• and
• a ground line electrically connected to said output line through said first driver transistor, for applying a ground voltage to said first driver transistor, wherein said n.sup.- amorphous silicon is doped with an n-type impurity at a lower concentration than that of said source and drain regions.

A thin-film transistor circuit for a logic gate circuit, comprising:

• a continuous amorphous silicon layer substantially having a uniform thickness;
• a load device formed in said continuous amorphous silicon layer and made of n.sup.- amorphous silicon;
• a first driver transistor having a gate electrode, a source region, a drain region, and channel region, said source, drain, and channel regions being formed in said continuous amorphous silicon layer, said source region being adjacent to said load device and being in direct contact with said load device, said first driver transistor turning on based on a voltage applied to said gate electrode of said first driver transistor;
• a supply line electrically connected to said load device, for applying a supply voltage to said load device;
• a ground line electrically connected to said drain regions of said first driver transistor, for applying a ground voltage to said first driver transistor;
• and
• an output line electrically connected to said source region, for providing logic level voltages based on the operation of said first driver transistor, wherein said n.sup.- amorphous silicon is doped with an n-type impurity at a lower concentration than that of said source and drain regions.

A thin-film transistor circuit for a logic gate circuit, comprising:

• a continuous amorphous silicon layer including a region made of n.sup.- amorphous silicon and a channel region of undoped amorphous silicon, said continuous amorphous silicon layer substantially having a uniform thickness;
• a driver transistor having a source region, a drain region, a channel region, and a gate electrode, said source and drain regions being formed in said continuous amorphous silicon layer adjacent to said channel region;
• and
• a load device formed in said amorphous layer, said load device corresponding to a portion of a region other than said source, drain, and channel regions and directly connected to said source region of said driver transistor, wherein said n.sup.- amorphous silicon is doped with an n-type impurity at a lower concentration than that of said source and drain regions.