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US 5,470,780 AGranted
Method of fabricating poly-silicon resistor
AssigneeNEC Corporation
InventorSeiichi Shishiguchi
Life of this patent
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Abstract
The method of fabricating a poly-silicon resistor includes a step for providing a dopant gas and a nitrous oxide gas as well as a silane gas to thereby deposit a silicon layer on a substrate by chemical vapor deposition under a deposition temperature not higher than 600 degrees centigrade so that the silicon layer includes the dopant of the dopant gas and oxygen, and a step for annealing the silicon layer under a temperature not lower than 600 degrees centigrade.
Claims6
A method of fabricating a poly-silicon resistor comprising the steps of:
- providing a dopant gas and a nitrous oxide gas as well as a silane gas;
- depositing a poly-silicon layer on a substrate by chemical vapor deposition under a deposition temperature not higher than 600 degrees centigrade, said silicon layer including the dopant of said dopant gas and oxygen;
- and
- annealing said poly-silicon layer under a temperature not lower than 600 degrees centigrade;
- wherein said poly-silicon layer includes said dopant at a concentration not higher than 1 at. % and said oxygen at a concentration not higher than 1 at. %.
2 more elements
Dependencies are inferred from the claim text.