Method of forming a polysilicon-on-silicide capacitor
AssigneeVLSI Technology, Inc.
InventorSubhash R. Nariani
Life of this patent
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Abstract
A method produces a capacitor. On a substrate, a first polysilicon layer is formed over an insulating region. A metal-silicide layer is formed on top of the first polysilicon layer. A dielectric layer is formed on top of the metal-silicide layer. A second polysilicon layer is formed on top of the dielectric layer. The second polysilicon layer and the dielectric layer are etched to form a top electrode and dielectric region. The metal-silicide layer and the first polysilicon layer are etched to form a bottom electrode.
Claims16
A method for producing a capacitor comprising the steps of:
- (a) forming a first polysilicon layer over an insulating region on a substrate;
- (b) forming a metal-silicide layer on top of the first polysilicon layer;
- (c) forming a dielectric layer on top of the metal-silicide layer;
- (d) forming a second polysilicon layer on top of the dielectric layer;
- (e) etching the second polysilicon layer to form a top electrode;
- and,
- (f) after step (e) etching the metal-silicide layer and the first polysilicon layer to form a bottom electrode.
A method for producing a capacitor comprising the steps of:
- (a) forming a conductive layer over an insulating region on a substrate, including forming a doped polysilicon sub-layer and on top of the doped polysilicon sub-layer, forming a metal-silicide sub-layer;
- (b) forming a dielectric layer on top of the conductive layer;
- (c) forming a polysilicon layer on top of the dielectric layer;
- (d) etching the polysilicon layer to form a top electrode;
- and,
- (e) after step (d) etching the conductive layer to form a bottom electrode.
Dependencies are inferred from the claim text.