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AssigneeKorea Advanced Institute of Science and Technology
InventorsByung T. Ahn, Dae G. Moon, Jeong N. Lee
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A method is disclosed for the production of polycrystalline silicon thin films characterized by performing heat treatment of amorphous silicon thin films deposited on a substrate at a relatively low temperature of between 300.degree. and 600.degree. C. under a pressure ranging from 10.sup.-3 to 1 torr. The method can provide polycrystalline silicon thin films having increased grain sizes of about 60-300 .mu.m. In accordance with the method, glass or ceramic substrates can be used instead of an expensive quartz substrate. SiH.sub.4 gas can also be used instead of Si.sub.2 H.sub.6 gas as a source gas. The polycrystalline silicon thin films disclosed have an electron and positive hole mobility closer to that of the level of single crystals, and thus the development of the SOI element having high performance such as TFT for LCD, or TFT for SRAM, and the like may be greatly advanced.
In a method of producing a polycrystalline silicon thin film having a grain size of about 60-300 .mu.m comprising depositing an amorphous silicon thin film onto a substrate and subjecting the resulting as-deposited amorphous silicon thin film to heat treatment, the improvement which comprises carrying out said heat treatment at a temperature between 450.degree. and 550.degree. C. under a vacuum pressure ranging from 10.sup.-3 to 1 torr, and placing the substrate on which said amorphous silicon thin film is deposited on a copper or brass susceptor in a heating furnace.
Dependencies are inferred from the claim text.